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Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS₂nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10³. The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS₂channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS₂as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb²⁺in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.

 

Magnetic domain structures are active electron transport agents and can be used to induce large magnetoresistance (MR), particularly in half-metallic solids. We have studied the excess resistance induced by a single magnetic domain wall in a one-dimensional half-metallic CrO 2 nanoscale conductor with a built-in constriction whose channel width ( d ) ranges from 30 to 200 nm. We observed that the domain wall-induced MR is enhanced by 70 fold when d decreases from 200 nm to 30 nm. We speculate that the enhancement is due to the increased domain wall resistance (DWR) and the extra contribution of ballistic magnetoresistance (BMR). We have uncovered a large size effect of d on the MR induced by the domain wall, which scales with d as d −1.87±0.32 . Accordingly, we predict that the MR ratio of a simple CrO 2 nanowire impregnated with a constriction at a 150 nm 2 cross-section could reach 100%. This large MR far exceeds that of a conventional ferromagnetic nanowire, confirming the role of half metallicity on enhanced magneto-transport. 

Magnetic skyrmions are of great interest to both fundamental research and applications in post-von-Neumann computing devices. The successful implementation of skyrmionic devices requires functionalities of skyrmions with effective controls. Here we show that the local dynamics of skyrmions, in contrast to the global dynamics of a skyrmion as a whole, can be introduced to provide effective functionalities for versatile computing. A single skyrmion interacting with local pinning centres under thermal effects can fluctuate in time and switch between a small-skyrmion and a large-skyrmion state, thereby serving as a robust true random number generator for probabilistic computing. Moreover, neighbouring skyrmions exhibit an anti-correlated coupling in their fluctuation dynamics. Both the switching probability and the dynamic coupling strength can be tuned by modifying the applied magnetic field and spin current. Our results could lead to progress in developing magnetic skyrmionic devices with high tunability and efficient controls.